IRF7342PBF vs IRF7342TRPBF Comparison

Detailed side-by-side comparison of IRF7342PBF by Infineon and IRF7342TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7342PBF IRF7342TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.48
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF7342PBF IRF7342TRPBF
Original Mfr International Rectifier (now Infineon) β€”
Technology HEXFET (Gen V) - P-Channel MOSFET Array HEXFET Power MOSFET (Fifth Generation), P-Channel
Configuration Dual P-Channel (2 independent MOSFETs) Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage V(DSS) -55 V β€”
Continuous Drain Current I(D) 3.4 A β€”
On-Resistance R(DS(on)) 0.105 ohm β€”
Power Dissipation P(D) 2 W β€”
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (SO-8) β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55 C to +150 C (Tj)
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] β€”
Switching Frequency Optimization < 100 kHz β€”
RoHS Status Compliant β€”
Halogen Status Halogen-Free β€”
Qualification JEDEC standard β€”
Drain-Source Voltage (Vds) β€” -55 V
Continuous Drain Current (Id) β€” -3.4 A at 25 C
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) β€” -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) β€” 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) β€” 2 W
Package β€” 8-SOIC (SO-8), surface mount
Packaging β€” Tape and Reel (TR)
Lead-Free / RoHS β€” Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type β€” P-Channel (enhancement mode)
Number of Channels β€” 2 (dual array)

Datasheets & Resources

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