IRF7342TRPBF vs IRF7313TRPBF 对比

详细并排对比 IRF7342TRPBF 出自 Infineon 和 IRF7313TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7342TRPBF IRF7313TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.27
Part Number IRF7342TRPBF IRF7313TRPBF
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR MOSFET Generation V (HEXFET Fifth Generation)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
工作温度范围 -55 C to +150 C (Tj) -55C to +150C (junction)
封装 8-SOIC (SO-8), surface mount 8-pin SOIC (SO-8) surface mount
安装类型 Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
MSL 等级 — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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