IRF7342TRPBF vs IRF7313TRPBF 비교

다음의 상세 나란히 비교: IRF7342TRPBF 제조: Infineon 및 IRF7313TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7342TRPBF IRF7313TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.48 $0.27
Part Number IRF7342TRPBF IRF7313TRPBF
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR MOSFET Generation V (HEXFET Fifth Generation)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
동작 온도 범위 -55 C to +150 C (Tj) -55C to +150C (junction)
패키지 8-SOIC (SO-8), surface mount 8-pin SOIC (SO-8) surface mount
실장 유형 Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
MSL 레벨 — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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