IRF7342TRPBF vs IRFR9024NTRPBF 对比

详细并排对比 IRF7342TRPBF 出自 Infineon 和 IRFR9024NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF ✓ 量产中

规格对比

参数 IRF7342TRPBF IRFR9024NTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.17
Part Number IRF7342TRPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel HEXFET (Gen 5)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
工作温度范围 -55 C to +150 C (Tj) —
封装 8-SOIC (SO-8), surface mount TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
Polarity — P-Channel
VDS (Drain-Source Voltage) — -55 V
Continuous Drain Current (Tc=25C) — -11 A
脉冲漏极电流 — [DATA_NEEDED: pulsed drain current]
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Threshold Voltage) — [DATA_NEEDED: VGS(th) typical]
RDS(on) Max at VGS=-10V — 175 mOhm
Total Gate Charge (Qg) — 12.7 nC
Maximum Power Dissipation (Tc=25C) — 38 W
工作结温 — -55C to +175C
引脚数量 — 3
RoHS 状态 — Compliant

数据手册与资源

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