IRF7769L1TRPBF vs IRFP2907PBF 对比
详细并排对比 IRF7769L1TRPBF 出自 Infineon 和 IRFP2907PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7769L1TRPBF | IRFP2907PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.72 | $2.45 |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) | 100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| Continuous Drain Current (TA=25C) | 20 A | — |
| Continuous Drain Current (TC=25C) | 124 A | — |
| 脉冲漏极电流 | 142 A | — |
| Power Dissipation (TA=25C) | 3.3 W | — |
| Power Dissipation (TC=25C) | 125 W | — |
| RDS(on) max at VGS=10V | 3.5 mOhm | — |
| RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge Qg | 200 nC | — |
| Technology | HEXFET (IR MOSFET) | HEXFET Stripe Planar DMOS (N-Channel) |
| 封装 | DirectFET Isometric L8 | — |
| Package Profile | 0.7 mm | — |
| 安装类型 | Surface Mount | — |
| 工作温度范围 | -55C to +150C (TJ) | — |
| MSL 等级 | 1 | — |
| Lead-Free Reflow | 260C qualified | — |
| 无卤 | Yes | — |
| RoHS Compliance | Compliant | Yes (Pb-free) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFP2907PBF |
| Drain-to-Source Voltage (V_DSS) | — | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | — | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | — | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | — | 470 W |
| Total Gate Charge (Q_g) | — | 410 nC |
| Maximum Junction Operating Temperature | — | +175 C |
| Package / Mounting Type | — | TO-247AC (Through Hole) |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Avalanche Rated | — | Yes (repetitive avalanche rated) |
| Body Diode | — | Integral (no external anti-parallel diode required) |
| Lead-Free | — | Yes |