IRF8736TRPBF vs IRFR5305TRPBF 对比

详细并排对比 IRF8736TRPBF 出自 Infineon 和 IRFR5305TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 量产中

规格对比

参数 IRF8736TRPBF IRFR5305TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.27 $0.32
FET Type N-Channel —
Technology StrongIRFET / HEXFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) Max 30 V -55 V
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] -2 V to -4 V
封装 SO-8 (8-SO, MS-012AA) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction) -55 C to +175 C
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 等级 1 (per JEDEC J-STD-020) 1
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Polarity — P-Channel
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
RoHS 状态 — Compliant (Pb-free PBF suffix)
Lead-Free Finish — Yes (PBF suffix)

数据手册与资源

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