IRF8736TRPBF vs IRLML0040TRPBF 对比

详细并排对比 IRF8736TRPBF 出自 Infineon 和 IRLML0040TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLML0040TRPBF IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF ✓ 量产中

规格对比

参数 IRF8736TRPBF IRLML0040TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.27 $0.16
FET Type N-Channel N-Channel
Technology StrongIRFET / HEXFET IR MOSFET / HEXFET
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A 3.6 A
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
封装 SO-8 (8-SO, MS-012AA) Micro3 (SOT-23)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction) —
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 等级 1 (per JEDEC J-STD-020) —
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Drain-to-Source Voltage (VDS) — 40 V
Pulsed Drain Current (IDM) — 14 A
RDS(on) Max at VGS=10V — 56 mOhm
Gate-to-Source Voltage (VGS) Max — [DATA_NEEDED: VGS maximum rating]
Total Gate Charge (Qg) — 2.6 nC
Power Dissipation (PD) at TA=25C — 1.3 W
工作结温 — -55C to +150C
Qualification Level — Consumer (per JEDEC JSD47F)
Moisture Sensitivity Level — MSL1 (per IPC/JEDEC J-STD-020D)
RoHS Compliance — Compliant (no lead, no bromide, no halogen)

数据手册与资源

浏览全部产品 创建 BOM 获取报价