IRF9Z34NPBF vs IRF7205TRPBF 对比
详细并排对比 IRF9Z34NPBF 出自 Infineon 和 IRF7205TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF9Z34NPBF | IRF7205TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.18 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | — |
| Pulsed Drain Current (Idm) | -72 A | — |
| Power Dissipation (Pd) at Tc=25C | 68 W | — |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| 工作温度范围 | -55C to +175C (junction) | — |
| 封装 | TO-220AB (through-hole, 3-pin) | SO-8 (8-SO) |
| 安装类型 | Through Hole | Surface Mount |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | — |
| Technology | HEXFET (5th generation) | IR HEXFET (4th generation) |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | — |
| RoHS 状态 | Compliant | — |
| FET Type | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25°C | — | -4.6 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=-10V | — | 70 mΩ |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | 130 mΩ |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -3.0 V |
| Total Gate Charge Qg | — | 27 nC |
| 功耗（TC=25°C） | — | 2.5 W |
| 工作结温 | — | -55 °C to +150 °C |
| RoHS / Lead-Free | — | Lead-Free (PBF suffix), RoHS compliant |
| Packaging | — | Tape & Reel (TR suffix) |