IRFB4110PBF vs IPP022N12NM6AKSA1 对比
详细并排对比 IRFB4110PBF 出自 Infineon 和 IPP022N12NM6AKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFB4110PBF | IPP022N12NM6AKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $2.04 |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | 395 W |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | TO-220AB (through-hole) | PG-TO220-3-1 (TO-220 through-hole) |
| Technology | HEXFET (planar DMOS) | OptiMOS 6 (N-channel trench MOSFET) |
| 安装类型 | Through Hole | Through Hole |
| RoHS 状态 | Compliant (Pb-free suffix) | Compliant |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| Continuous Drain Current (ID) at TA=25°C | — | 29 A |
| Pulsed Drain Current (IDM) at TC=25°C | — | 203 A |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 2.2 mΩ |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| 工作温度范围 | — | -55°C to +175°C |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Manufacturer | — | Infineon Technologies |