IRFB4110PBF vs IPP022N12NM6AKSA1 Comparison
Detailed side-by-side comparison of IRFB4110PBF by Infineon and IPP022N12NM6AKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4110PBF | IPP022N12NM6AKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $2.04 |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | 395 W |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | TO-220AB (through-hole) | PG-TO220-3-1 (TO-220 through-hole) |
| Technology | HEXFET (planar DMOS) | OptiMOS 6 (N-channel trench MOSFET) |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant (Pb-free suffix) | Compliant |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| Continuous Drain Current (ID) at TA=25°C | — | 29 A |
| Pulsed Drain Current (IDM) at TC=25°C | — | 203 A |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 2.2 mΩ |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Operating Temperature Range | — | -55°C to +175°C |
| Pin Count | — | 3 (Gate, Drain, Source) |
| Manufacturer | — | Infineon Technologies |