IRFH5015TRPBF vs IRF3007STRLPBF 对比
详细并排对比 IRFH5015TRPBF 出自 Infineon 和 IRF3007STRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFH5015TRPBF | IRF3007STRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.92 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | 110 nC typical |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| 封装 | 8-PQFN (5x6) SuperSO8 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| 工作温度 | -55C to +150C (TJ max) | — |
| RoHS 状态 | Compliant | Compliant (Lead-Free, PBF suffix) |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | — | 75 V |
| Continuous Drain Current (Id) at Tc=25°C | — | 62 A |
| Pulsed Drain Current (Idm) | — | 250 A |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 12.6 mΩ typical at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Maximum Power Dissipation (Pd) | — | 120 W at Tc=25°C |
| 工作结温 | — | -55°C to +175°C |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.0 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 40 °C/W |
| Package Type | — | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount |
| Avalanche Rated | — | Yes (Repetitive Avalanche Allowed up to Tjmax) |