IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon
料号： IRF3007STRLPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
IRF3007STRLPBF 概述
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to handle high currents and voltages with minimal conduction loss. As a member of the N-channel enhancement-mode family, the IRF3007STRLPBF turns on when a positive gate-to-source voltage exceeds its threshold, allowing current to flow from drain to source. Within the power-management hierarchy, it sits between signal-level logic MOSFETs and IGBTs (Insulated Gate Bipolar Transistors), offering the best balance of low on-resistance and moderate switching speed for sub-100 V applications.
Key specifications include a drain-to-source breakdown voltage of 75 V, continuous drain current of 62 A at 25 °C case temperature, pulsed drain current handling of 250 A, and a maximum junction temperature of 175 °C. The 12.6 mΩ typical R_DS(on) at VGS = 10 V minimizes conduction losses, while the low gate charge (typically 110 nC total) and fast switching characteristics support efficient high-frequency operation. The D2PAK package provides a low thermal resistance of 40 °C/W junction-to-case, enabling direct PCB heatsink mounting for high-power designs.
Typical applications include industrial motor drives, synchronous rectification in switch-mode power supplies, DC-DC converter high-side switches, battery management systems for 12 V/24 V/48 V rails, and automotive solenoid and relay drivers. The 175 °C maximum junction temperature and avalanche-rated ruggedness make it suitable for harsh-environment designs where repetitive avalanche events may occur.
When designing with this device, ensure the gate drive voltage reaches at least 10 V for full enhancement and minimum R_DS(on). Use a gate resistor (typically 10-100 Ω) to control switching speed and limit ringing, and provide adequate copper pours or an external heatsink to keep junction temperature below 150 °C for reliable long-term operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
直接替换替代料： IRF3007STRLPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRF3007STRLPBF （相同外形与封装尺寸） ——差异在于 Package, Technology, RoHS Status, Drain-Source Voltage (VDS), Operating Junction Temperature.
快速对比工具——选择替代料号进行并排对比：
IRFB3207ZPBF
✅ 直接替换✓ 有现货
$1.62 / 个
查看数据手册 →IRFB4110PBF
✅ 直接替换✓ 有现货
$1.55 / 个
查看数据手册 →IRFB3077PBF
✅ 直接替换📋 参考替代料（不在目录中）
IRFB3307ZPBF
✅ 直接替换📋 参考替代料（不在目录中）
IRFB3207PBF
✅ 直接替换📋 参考替代料（不在目录中）
IRFB4310ZPBF
✅ 直接替换📋 参考替代料（不在目录中）
IRF1018EPBF
✅ 直接替换✓ 有现货
$0.38 / 个
查看数据手册 →IRFH5015TRPBF
✅ 直接替换✓ 有现货
$0.62 / 个
查看数据手册 →IRF3007STRLPBF 最大额定值与电气特性
| Polarity | N-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | 75 V |
| Continuous Drain Current (Id) at Tc=25°C | 62 A |
| Pulsed Drain Current (Idm) | 250 A |
| Static Drain-to-Source On-Resistance (RDS(on)) | 12.6 mΩ typical at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 110 nC typical |
| Maximum Power Dissipation (Pd) | 120 W at Tc=25°C |
| 工作结温 | -55°C to +175°C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.0 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | 40 °C/W |
| Package Type | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant (Lead-Free, PBF suffix) |
| Avalanche Rated | Yes (Repetitive Avalanche Allowed up to Tjmax) |
IRF3007STRLPBF 引脚配置
| 引脚 1 | Gate — Gate terminal - drive with 10V for full enhancement |
| 引脚 2 | Drain — Drain terminal - internally connected to the metal tab/backside |
| 引脚 3 | Source — Source terminal - reference for gate drive |
| 引脚 Tab | Drain — Metal tab electrically connected to pin 2 (Drain) - mount to PCB copper pour or heatsink for thermal dissipation |
安全工作区 (DC)
典型应用
IRF3007STRLPBF 适用于 6 应用s: Industrial Motor Drive (BLDC and DC), Synchronous Rectification in SMPS, Battery Management System (BMS) High-Side Switch, Automotive 12 V/24 V Solenoid and Relay Driver, High-Current DC Load Switch, Power Tools and Cordless Equipment.
Industrial Motor Drive (BLDC and DC)
The IRF3007STRLPBF is well suited for industrial motor drive applications requiring high-current switching in the 24 V to 48 V range. Its 62 A continuous drain current rating at 25 °C case and 12.6 mΩ RDS(on) at VGS = 10 V deliver low conduction losses for 30 A to 50 A continuous motor loads. The 175 °C maximum junction temperature supports harsh industrial environments, while the D2PAK package enables direct PCB-mount heatsinking. Pair with a gate driver such as the IR2109SPBF or IR2110SPBF for reliable high-side/low-side drive in three-phase inverter topologies used in industrial BLDC servo motors and conveyor drives.
推荐
Synchronous Rectification in SMPS
The IRF3007STRLPBF functions as a synchronous rectifier MOSFET in 48 V to 60 V switch-mode power supplies (SMPS). Its low 12.6 mΩ on-resistance at VGS = 10 V reduces conduction loss compared to Schottky diodes, particularly in high-current 20 A to 40 A output rails. The 110 nC typical total gate charge enables switching frequencies of 100 kHz to 250 kHz with acceptable drive losses. Place the MOSFET on the low-side of a buck converter with the tab connected to ground, using a synchronous rectifier controller IC to manage dead-time and prevent shoot-through.
推荐
Battery Management System (BMS) High-Side Switch
In 24 V and 48 V battery management systems, the IRF3007STRLPBF serves as a high-side disconnect switch with low conduction loss. Its 75 V V(BR)DSS provides comfortable headroom above 48 V nominal battery stacks, while the 62 A continuous current rating handles peak discharge currents for e-mobility and stationary storage. The D2PAK package allows PCB-mount heatsinking for continuous 30 A operation. Use a dedicated high-side gate driver IC such as the IR2117PBF for floating supply generation to drive the gate above the battery voltage.
推荐
Automotive 12 V/24 V Solenoid and Relay Driver
The IRF3007STRLPBF drives 12 V and 24 V automotive solenoids, relays, and high-current lamps in aftermarket and non-safety applications. Its 12.6 mΩ on-resistance and 62 A continuous current rating handle inductive kick from solenoids up to several amperes continuous. The 175 °C maximum junction temperature survives under-hood thermal stress. Note that this part is not AEC-Q101 qualified; for OEM automotive applications, select the AUIRF7640S2TR or similar AEC-Q101-qualified HEXFETs from Infineon's automotive portfolio instead.
推荐
High-Current DC Load Switch
Use the IRF3007STRLPBF as a high-current DC load switch in industrial control panels and power distribution units. Its 62 A continuous rating and 75 V V(BR)DSS make it suitable for switching 24 V and 48 V DC buses powering resistive heaters, solenoids, and motor loads. The low on-resistance of 12.6 mΩ minimizes voltage drop across the switch, while the D2PAK package with its exposed tab provides excellent thermal dissipation. Drive the gate directly from a microcontroller GPIO through a 100 Ω gate resistor for simple on/off control.
推荐
Power Tools and Cordless Equipment
The IRF3007STRLPBF is appropriate for cordless power tools and portable battery-powered equipment operating from 18 V to 36 V battery packs. Its 12.6 mΩ RDS(on) and 62 A continuous current handle peak motor currents of 30 A to 50 A common in drill and saw applications. The 175 °C junction temperature rating supports the harsh thermal cycling of intermittent high-current operation. Place the MOSFET as the low-side switch in the brushed or BLDC motor H-bridge, paired with an appropriate gate driver and current-sense amplifier for overload protection.
推荐
推荐产品汇总
工程参考数据： IRF3007STRLPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRFB3207ZPBF | IRFB4110PBF | IRFB3077PBF | IRFB3307ZPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Drain-to-Source Voltage V(BR)DSS | 75 V | 75 V | 100 V | 75 V | 75 V |
| Continuous Drain Current (Tc=25°C) | 62 A | 75 A | 120 A | 120 A | 130 A |
| RDS(on) typical at VGS=10V | 12.6 mΩ | 6.5 mΩ | 4.5 mΩ | 3.3 mΩ | 3.2 mΩ |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Total Gate Charge (Qg) | 110 nC typical | 120 nC | 160 nC | 190 nC | 180 nC |
| RoHS Compliance | Yes (Lead-Free, PBF) | Yes | Yes | Yes | Yes |
| Approximate Unit Price (qty-1000) | $0.92 | $1.10 | $1.65 | $1.85 | $1.45 |
关键差异点
- Lower RDS(on) drop-in alternatives available with same D2PAK footprint （对比 IRFB3207ZPBF)
- Higher voltage headroom option for 100 V bus systems （对比 IRFB4110PBF)
- Lower conduction loss option for 75 V high-current designs （对比 IRFB3077PBF)
设计说明
The IRF3007STRLPBF has a junction-to-case thermal resistance (RθJC) of 1.0 °C/W and junction-to-ambient (RθJA) of 40 °C/W. At 62 A continuous drain current with 30 V VDS (worst-case switching), conduction loss alone is approximately 48 W (I² × RDS(on) = 62² × 0.0126), far exceeding the 120 W package rating only if Tj reaches 175 °C. Estimated: at 48 W dissipation with RθJA = 40 °C/W, junction rises 1920 °C above ambient - clearly impractical. A heatsink limiting RθJA to under 2 °C/W is mandatory for continuous operation above 10 A. Always compute Tj = Ta + (Pd × RθJA) and keep Tj below 150 °C for long-term reliability.
The D2PAK tab is internally connected to the drain (pin 2). Solder the tab to a substantial PCB copper pour - ideally 1 oz copper covering at least 1 square inch on the top layer, plus thermal vias to inner copper planes - to minimize RθJA. For continuous currents above 20 A, supplement the PCB copper with a clip-on or bolt-down heatsink using thermal interface material. Keep the gate-drive trace short (under 25 mm) and use a 10 Ω to 100 Ω gate resistor to dampen parasitic ringing between gate-drain capacitance and source-lead inductance.
Do not operate the IRF3007STRLPBF with VGS below 6 V - partial enhancement increases RDS(on) dramatically and can cause thermal runaway. Ensure the gate-drive voltage reaches 10 V minimum at the gate pin, accounting for any voltage drop across the gate resistor during turn-on. Avoid exceeding the avalanche energy rating during inductive switching - add a flyback diode or TVS clamp across inductive loads. Finally, verify that the drain-to-source voltage stays below 60 V (80% derating) under all transient conditions, including load-dump and reverse-battery events in automotive environments.
合规信息
RoHS compliant per Infineon product page - 'PBF' suffix indicates lead-free (Pb-free) termination. Lead-free and halogen-free per Infineon material declaration. Conflict-minerals compliant per Infineon supply chain policy. NOT AEC-Q100/AEC-Q101 qualified - use AUIRF7640S2TR or similar automotive-grade parts for OEM automotive applications.
