IRFP2907PBF vs IRFP260MPBF 对比
详细并排对比 IRFP2907PBF 出自 Infineon 和 IRFP260MPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFP2907PBF | IRFP260MPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.45 | $2.85 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFP2907PBF | — |
| Technology | HEXFET Stripe Planar DMOS (N-Channel) | MOSFET (Metal Oxide Semiconductor) |
| Drain-to-Source Voltage (V_DSS) | 75 V | — |
| Continuous Drain Current (I_D) at T_C = 25 C | 209 A | — |
| Static Drain-to-Source On-Resistance (R_DS(on)) | 4.5 mOhm at V_GS = 10 V | — |
| Power Dissipation (P_D) at T_C = 25 C | 470 W | — |
| Total Gate Charge (Q_g) | 410 nC | — |
| Maximum Junction Operating Temperature | +175 C | — |
| Package / Mounting Type | TO-247AC (Through Hole) | — |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| RoHS Compliance | Yes (Pb-free) | — |
| Avalanche Rated | Yes (repetitive avalanche rated) | Yes |
| Body Diode | Integral (no external anti-parallel diode required) | — |
| Lead-Free | Yes | Yes |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) max | — | 40 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance Ciss | — | 1560 pF |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg] |
| 工作温度范围 | — | -55C to +175C |
| 封装 / 外壳 | — | TO-247AC (3-lead through-hole) |
| 安装类型 | — | Through Hole |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | Not Applicable (through-hole) |