IRFP2907PBF vs IRFP260MPBF Comparison

Detailed side-by-side comparison of IRFP2907PBF by Infineon and IRFP260MPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP2907PBF IRFP260MPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.45 $2.85
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP2907PBF β€”
Technology HEXFET Stripe Planar DMOS (N-Channel) MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (V_DSS) 75 V β€”
Continuous Drain Current (I_D) at T_C = 25 C 209 A β€”
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V β€”
Power Dissipation (P_D) at T_C = 25 C 470 W β€”
Total Gate Charge (Q_g) 410 nC β€”
Maximum Junction Operating Temperature +175 C β€”
Package / Mounting Type TO-247AC (Through Hole) β€”
Pin Count 3 (Gate, Drain, Source) β€”
RoHS Compliance Yes (Pb-free) β€”
Avalanche Rated Yes (repetitive avalanche rated) Yes
Body Diode Integral (no external anti-parallel diode required) β€”
Lead-Free Yes Yes
Part Status β€” Active
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) at Tc=25C β€” 50 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C β€” 300 W
On-Resistance RDS(on) max β€” 40 mOhm
Gate Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th)]
Input Capacitance Ciss β€” 1560 pF
Total Gate Charge Qg β€” [DATA_NEEDED: Qg]
Operating Temperature Range β€” -55C to +175C
Package / Case β€” TO-247AC (3-lead through-hole)
Mounting Type β€” Through Hole
RoHS Status β€” Compliant
MSL Level β€” Not Applicable (through-hole)

Datasheets & Resources

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