IRFP2907PBF vs IRFZ34NPBF 对比

详细并排对比 IRFP2907PBF 出自 Infineon 和 IRFZ34NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFP2907PBF IRFZ34NPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $0.61
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRFP2907PBF —
Technology HEXFET Stripe Planar DMOS (N-Channel) HEXFET (Planar DMOS, 5th generation)
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
引脚数量 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) —
Avalanche Rated Yes (repetitive avalanche rated) —
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes —
Part Status — Active
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (V_DSS) — 55 V
Continuous Drain Current (I_D) at Tc=25C — 29 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc=25C — 68 W
On-Resistance R_DS(on) max at V_GS=10V — 40 mOhm
Gate Charge (Q_g) typ — 22.7 nC
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: gate threshold voltage]
Input Capacitance (C_iss) typ — [DATA_NEEDED: input capacitance]
工作温度范围 — -55 C to +175 C
Maximum Junction Temperature — 175 C
封装 — TO-220AB (3-pin + tab, through-hole)
安装类型 — Through Hole
Lead-Free Status — Yes (Pb-free, RoHS compliant)
Qualification — JEDEC standard
RoHS 状态 — Compliant
Configuration — Single N-Channel, 3-pin (3+tab)

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