IRFR1205TRPBF vs IRFR3607TRPBF 对比

详细并排对比 IRFR1205TRPBF 出自 Infineon 和 IRFR3607TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR1205TRPBF IRFR3607TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $0.39
FET Type N-Channel —
Technology HEXFET (IR MOSFET, 5th generation) IR HEXFET (planar DMOS)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max 4 V
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC 56 nC
Power Dissition (PD) at TC=25C 107 W —
工作结温 -55C to +175C —
封装 TO-252AA (DPAK) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID, Tc) — 56 A
Calculated Die Drain Current — 80 A
On-State Resistance (RDS(on)) — 9 mOhm @ VGS=10V, ID=46A
Gate-to-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD, Tc) — 140 W
Thermal Resistance (RthJC) — 1.0 C/W
工作温度范围 — -55C to +175C (TJ max 175C per datasheet convention)
Avalanche SOA — Fully characterized
RoHS / Lead-Free — Compliant / Pb-free (PBF suffix, JESD-609 e3)

数据手册与资源

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