IRFR1205TRPBF vs IRFR3607TRPBF Comparison

Detailed side-by-side comparison of IRFR1205TRPBF by Infineon and IRFR3607TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR1205TRPBF IRFR3607TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.39
FET Type N-Channel β€”
Technology HEXFET (IR MOSFET, 5th generation) IR HEXFET (planar DMOS)
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at TC=25C 44 A β€”
Pulsed Drain Current (IDM) 160 A β€”
Gate-Source Voltage (VGS) max +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max 4 V
On-Resistance RDS(on) at VGS=10V 27 mOhm max β€”
Total Gate Charge (Qg) 43.3 nC 56 nC
Power Dissition (PD) at TC=25C 107 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (PBF suffix = lead-free) β€”
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] β€”
Polarity / Channel Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 75 V
Continuous Drain Current (ID, Tc) β€” 56 A
Calculated Die Drain Current β€” 80 A
On-State Resistance (RDS(on)) β€” 9 mOhm @ VGS=10V, ID=46A
Gate-to-Source Voltage (VGS) Max β€” +/-20 V
Power Dissipation (PD, Tc) β€” 140 W
Thermal Resistance (RthJC) β€” 1.0 C/W
Operating Temperature Range β€” -55C to +175C (TJ max 175C per datasheet convention)
Avalanche SOA β€” Fully characterized
RoHS / Lead-Free β€” Compliant / Pb-free (PBF suffix, JESD-609 e3)

Datasheets & Resources

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