IRFR120NTRPBF vs IRFR1205TRPBF 对比
详细并排对比 IRFR120NTRPBF 出自 Infineon 和 IRFR1205TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR120NTRPBF | IRFR1205TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.26 | $0.49 |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | 44 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| 工作结温范围 | -55C to +175C | — |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET (IR MOSFET, 5th generation) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 55 V |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V min, 4 V max |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Total Gate Charge (Qg) | — | 43.3 nC |
| Power Dissition (PD) at TC=25C | — | 107 W |
| 工作结温 | — | -55C to +175C |
| RoHS 状态 | — | Compliant (PBF suffix = lead-free) |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |