IRFR120NTRPBF vs IRFR1205TRPBF 비교

다음의 상세 나란히 비교: IRFR120NTRPBF 제조: Infineon 및 IRFR1205TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR120NTRPBF IRFR1205TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.26 $0.49
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 9.4 A 44 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 160 A
Maximum Power Dissipation (PD) at TC=25C 48 W —
Static Drain-to-Source On-Resistance (RDS(on)) max 210 milliohms at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2 V to 4 V typical —
Total Gate Charge (Qg) typical 16.7 nC —
Gate-to-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-to-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
동작 접합 온도 범위 -55C to +175C —
패키지 TO-252AA (DPAK) TO-252AA (DPAK)
실장 유형 Surface Mount Surface Mount
Channel Type N-Channel Enhancement Mode —
Technology HEXFET (IR MOSFET fifth generation) HEXFET (IR MOSFET, 5th generation)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] —
Thermal Resistance Junction-to-Case (RthJC) max [DATA_NEEDED: RthJC] —
Lead-Free / RoHS Status Lead-Free, RoHS Compliant —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 55 V
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — 2 V min, 4 V max
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Total Gate Charge (Qg) — 43.3 nC
Power Dissition (PD) at TC=25C — 107 W
동작 접합 온도 — -55C to +175C
RoHS 상태 — Compliant (PBF suffix = lead-free)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

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