IRFR220NTRLPBF vs IRLR120NTRPBF 对比

详细并排对比 IRFR220NTRLPBF 出自 Infineon 和 IRLR120NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ 量产中
Infineon
IRLR120NTRPBF IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF ✓ 量产中

规格对比

参数 IRFR220NTRLPBF IRLR120NTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.22 $0.27
Polarity N-Channel —
Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 200 V —
Continuous Drain Current (Id) at Tc=25C 5 A 10 A
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed Idm]
Static Drain-Source On-Resistance (RDS(on)) 0.800 ohm (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] 13.3 nC
Gate-to-Drain Charge (Qgd) Low (per datasheet - HEXFET design) —
Power Dissipation (Pd) at Tc=25C 43 W 48 W
工作温度范围 -55C to +150C (junction) -55C to +175C (junction)
封装 TO-252AA (DPAK), 2 Leads + Tab, SC-63 TO-252AA (DPAK), 3-pin surface mount
安装类型 Surface Mount Surface Mount
MSL 等级 1 1
RoHS 状态 Compliant (Pb-free PBF suffix) —
Packaging Tape & Reel (Left orientation - TRLPBF) —
Avalanche Rated Yes (HEXFET ruggedized design) —
Technology Family HEXFET, Planar, Generation 3 —
FET Type — N-Channel MOSFET
Technology — HEXFET (Fifth Generation, planar)
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max at Vgs=10V — 185 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Avalanche Energy Rating — Fully avalanche rated
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

数据手册与资源

浏览全部产品 创建 BOM 获取报价