IRFR220NTRLPBF vs IRLR120NTRPBF 비교
다음의 상세 나란히 비교: IRFR220NTRLPBF 제조: Infineon 및 IRLR120NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR220NTRLPBF | IRLR120NTRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.22 | $0.27 |
| Polarity | N-Channel | — |
| Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 5 A | 10 A |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed Idm] |
| Static Drain-Source On-Resistance (RDS(on)) | 0.800 ohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 13.3 nC |
| Gate-to-Drain Charge (Qgd) | Low (per datasheet - HEXFET design) | — |
| Power Dissipation (Pd) at Tc=25C | 43 W | 48 W |
| 동작 온도 범위 | -55C to +150C (junction) | -55C to +175C (junction) |
| 패키지 | TO-252AA (DPAK), 2 Leads + Tab, SC-63 | TO-252AA (DPAK), 3-pin surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 | 1 |
| RoHS 상태 | Compliant (Pb-free PBF suffix) | — |
| Packaging | Tape & Reel (Left orientation - TRLPBF) | — |
| Avalanche Rated | Yes (HEXFET ruggedized design) | — |
| Technology Family | HEXFET, Planar, Generation 3 | — |
| FET Type | — | N-Channel MOSFET |
| Technology | — | HEXFET (Fifth Generation, planar) |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Rds(on) Max at Vgs=10V | — | 185 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Avalanche Energy Rating | — | Fully avalanche rated |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |