IRFR220NTRPBF vs IRLR120NTRPBF 对比

详细并排对比 IRFR220NTRPBF 出自 Infineon 和 IRLR120NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR220NTRPBF IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF ✓ 量产中
Infineon
IRLR120NTRPBF IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF ✓ 量产中

规格对比

参数 IRFR220NTRPBF IRLR120NTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.22 $0.27
FET Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (Fifth Generation, planar)
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance Rds(on) max at VGS=10V 600 milliohm —
Total Gate Charge (Qg) 15 nC (typical per Mouser listing) 13.3 nC
Maximum Power Dissition (PD) at TC=25°C 43 W —
工作结温 -55°C to +150°C —
封装 TO-252AA (DPAK), surface mount TO-252AA (DPAK), 3-pin surface mount
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited floor life per JEDEC J-STD-020) 1
RoHS 状态 Compliant (PBF suffix) —
Avalanche Energy Rated Yes (fully characterized) —
Lead-Free Yes (PBF suffix indicates Pb-free plating) —
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 10 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed Idm]
Rds(on) Max at Vgs=10V — 185 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Power Dissipation (Pd) at Tc=25C — 48 W
工作温度范围 — -55C to +175C (junction)
Avalanche Energy Rating — Fully avalanche rated
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

数据手册与资源

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