IRFR220NTRPBF vs IRLR120NTRPBF Comparison

Detailed side-by-side comparison of IRFR220NTRPBF by Infineon and IRLR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR220NTRPBF IRLR120NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (Fifth Generation, planar)
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance Rds(on) max at VGS=10V 600 milliohm —
Total Gate Charge (Qg) 15 nC (typical per Mouser listing) 13.3 nC
Maximum Power Dissition (PD) at TC=25°C 43 W —
Operating Junction Temperature -55°C to +150°C —
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK), 3-pin surface mount
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited floor life per JEDEC J-STD-020) 1
RoHS Status Compliant (PBF suffix) —
Avalanche Energy Rated Yes (fully characterized) —
Lead-Free Yes (PBF suffix indicates Pb-free plating) —
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 10 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed Idm]
Rds(on) Max at Vgs=10V — 185 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Power Dissipation (Pd) at Tc=25C — 48 W
Operating Temperature Range — -55C to +175C (junction)
Avalanche Energy Rating — Fully avalanche rated
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

Datasheets & Resources

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