IRFR3710ZTRPBF vs IRFR4105TRPBF 对比

详细并排对比 IRFR3710ZTRPBF 出自 Infineon 和 IRFR4105TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ 量产中
Infineon
IRFR4105TRPBF IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF ✓ 量产中

规格对比

参数 IRFR3710ZTRPBF IRFR4105TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.42 $0.58
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 56 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W —
工作结温 -55C to +175C —
Technology HEXFET (IR MOSFET) HEXFET (5th generation IR MOSFET)
封装 TO-252AA (DPAK) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant (lead-free, PBF suffix)
Lead-Free Yes —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (V_DS max) — 55 V
Continuous Drain Current (I_D at Tc) — 27 A
On-Resistance (R_DS(on) max at V_GS=10V) — 45 milliohm
Gate-Source Voltage (V_GS max) — 20 V
Total Gate Charge (Q_G) — 22.7 nC
Power Dissipation (P_D at Tc) — 68 W
工作温度范围 — -55C to +175C
Gate Threshold Voltage (V_GS(th) typ) — [DATA_NEEDED: V_GS(th) typical value]
Packaging Type — Tape and Reel (TRPBF)
MSL 等级 — [DATA_NEEDED: MSL rating]
Avalanche Energy (E_AS) — [DATA_NEEDED: E_AS rating]

数据手册与资源

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