IRFR4105TRPBF vs IPD30N06S215ATMA2 对比
详细并排对比 IRFR4105TRPBF 出自 Infineon 和 IPD30N06S215ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR4105TRPBF | IPD30N06S215ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.58 | $0.36 |
| 晶体管类型 | N-Channel MOSFET | N-Channel Enhancement Mode |
| Technology | HEXFET (5th generation IR MOSFET) | — |
| Drain-Source Voltage (V_DS max) | 55 V | — |
| Continuous Drain Current (I_D at Tc) | 27 A | — |
| On-Resistance (R_DS(on) max at V_GS=10V) | 45 milliohm | — |
| Gate-Source Voltage (V_GS max) | 20 V | — |
| Total Gate Charge (Q_G) | 22.7 nC | — |
| Power Dissipation (P_D at Tc) | 68 W | — |
| 封装 | TO-252AA (DPAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C | — |
| Gate Threshold Voltage (V_GS(th) typ) | [DATA_NEEDED: V_GS(th) typical value] | — |
| RoHS 状态 | Compliant (lead-free, PBF suffix) | — |
| Packaging Type | Tape and Reel (TRPBF) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | MSL1 (up to 260 C peak reflow) |
| Avalanche Energy (E_AS) | [DATA_NEEDED: E_AS rating] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS Power MOSFET |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID, Tc) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 136 W |
| 封装 / 外壳 | — | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) |
| 工作温度 | — | -55 C to +175 C (junction) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free / RoHS | — | Green package (lead free), RoHS compliant |
| Gate Threshold Type | — | Logic-level compatible |
| Packing | — | Tape & Reel (T/R) |