IRFR4105TRPBF vs IRFZ44NPBF 对比

详细并排对比 IRFR4105TRPBF 出自 Infineon 和 IRFZ44NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR4105TRPBF IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF ✓ 量产中

规格对比

参数 IRFR4105TRPBF IRFZ44NPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.58 $0.65
晶体管类型 N-Channel MOSFET —
Technology HEXFET (5th generation IR MOSFET) HEXFET (Advanced Process)
Drain-Source Voltage (V_DS max) 55 V —
Continuous Drain Current (I_D at Tc) 27 A —
On-Resistance (R_DS(on) max at V_GS=10V) 45 milliohm —
Gate-Source Voltage (V_GS max) 20 V —
Total Gate Charge (Q_G) 22.7 nC —
Power Dissipation (P_D at Tc) 68 W —
封装 TO-252AA (DPAK) TO-220AB (3-pin + tab)
安装类型 Surface Mount Through Hole
工作温度范围 -55C to +175C —
Gate Threshold Voltage (V_GS(th) typ) [DATA_NEEDED: V_GS(th) typical value] —
RoHS 状态 Compliant (lead-free, PBF suffix) Compliant
Packaging Type Tape and Reel (TRPBF) —
MSL 等级 [DATA_NEEDED: MSL rating] —
Avalanche Energy (E_AS) [DATA_NEEDED: E_AS rating] —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Total Gate Charge (Qg) — 42 nC
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
工作结温 — -55C to +175C
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]

数据手册与资源

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