IRFR5305TRLPBF vs IRF5305STRRPBF 对比

详细并排对比 IRFR5305TRLPBF 出自 Infineon 和 IRF5305STRRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF5305STRRPBF IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon

IRF5305STRRPBF - P-CH 55V 31A HEXFET MOSFET D2PAK | Infineon

IRF5305STRRPBF ✓ 量产中

规格对比

参数 IRFR5305TRLPBF IRF5305STRRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.38 $0.62
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] [DATA_NEEDED: VGS(th) typical/min]
Power Dissipation (PD) at Tc=25C 110 W —
工作结温 -55C to +175C -55C to +175C
封装 TO-252AA (DPAK), surface mount D2PAK (TO-263) Surface Mount
安装类型 Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (Advanced Process)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") Yes (Pb-free suffix)
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
晶体管类型 — P-Channel MOSFET
Drain-to-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC — -31 A
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max @ VGS=-10V — 60 mOhm
Power Dissipation (TC) — 110 W
Power Dissipation (TA) — 3.8 W
Packaging — Tape & Reel (TR)
Polarity — P-Channel

数据手册与资源

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