IRFR5410TRPBF vs IRFR5305TRLPBF 对比

详细并排对比 IRFR5410TRPBF 出自 Infineon 和 IRFR5305TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR5410TRPBF IRFR5305TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $0.38
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V -55 V
Continuous Drain Current (ID) at TC = 25 °C -13 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΩ —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Total Gate Charge (Qg) typ 70 nC —
封装 TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
Power Dissition (PD) at TC = 25 °C 66 W —
工作温度范围 -55 °C to +150 °C (TJ) —
安装类型 Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET fifth-generation planar MOSFET
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) —
MSL 等级 [DATA_NEEDED: MSL rating] —
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A —
Polarity / Channel Type — P-Channel
Continuous Drain Current (ID) at Tc=25C — -31 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
工作结温 — -55C to +175C
Lead-Free / RoHS — Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

数据手册与资源

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