IRFR5505TRPBF vs IRLU024NPBF 对比

详细并排对比 IRFR5505TRPBF 出自 Infineon 和 IRLU024NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR5505TRPBF IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF ✓ 量产中

规格对比

参数 IRFR5505TRPBF IRLU024NPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.61
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Series HEXFET —
Polarity P-Channel —
Technology IR MOSFET (HEXFET 5th generation) HEXFET Power MOSFET (5th generation)
Drain-Source Voltage (VDS) max -55 V —
Continuous Drain Current (ID) at TC=25C -18 A 17 A
Pulsed Drain Current (IDM) -72 A [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) max +/-20 V —
On-Resistance RDS(on) max at VGS=-10V 110 mOhm —
Total Gate Charge (Qg) 21.3 nC 10 nC (typical, per listing)
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Rise Time (tr) [DATA_NEEDED: tr] —
Fall Time (tf) [DATA_NEEDED: tf] —
Maximum Power Dissipation (PD) at TC=25C 57 W —
工作结温 -55 C to +175 C -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) 2.2 C/W 3.3 C/W
Thermal Resistance Junction-to-Ambient (RthJA) 50 C/W (typical, DPAK on 1 oz copper) 110 C/W (50 C/W PCB-mounted)
封装 TO-252AA (DPAK), surface mount IPAK (TO-251AA), Through Hole
安装类型 Surface Mount Through Hole
RoHS 状态 Compliant (PBF suffix) —
Lead-Free Yes (PBF suffix) —
Part Number — IRLU024NPBF
FET Type — N-Channel, Logic-Level
Drain-to-Source Voltage (VDS) — 55 V
On-Resistance RDS(on) max at VGS=10V — 65 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Power Dissipation (PD) at TC=25C — 45 W
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free plating)
Qualification — JEDEC standard
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)

数据手册与资源

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