IRFR5505TRPBF vs IRLU024NPBF 비교
다음의 상세 나란히 비교: IRFR5505TRPBF 제조: Infineon 및 IRLU024NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR5505TRPBF | IRLU024NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.48 | $0.61 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| Polarity | P-Channel | — |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET Power MOSFET (5th generation) |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | 17 A |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | — |
| Total Gate Charge (Qg) | 21.3 nC | 10 nC (typical, per listing) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| 동작 접합 온도 | -55 C to +175 C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | 110 C/W (50 C/W PCB-mounted) |
| 패키지 | TO-252AA (DPAK), surface mount | IPAK (TO-251AA), Through Hole |
| 실장 유형 | Surface Mount | Through Hole |
| RoHS 상태 | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Part Number | — | IRLU024NPBF |
| FET Type | — | N-Channel, Logic-Level |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| On-Resistance RDS(on) max at VGS=10V | — | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free plating) |
| Qualification | — | JEDEC standard |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |