IRFZ44NPBF vs IRLZ44NPBF 对比
详细并排对比 IRFZ44NPBF 出自 Infineon 和 IRLZ44NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFZ44NPBF | IRLZ44NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.68 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | — |
| Total Gate Charge (Qg) | 42 nC | 32 nC |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| 工作结温 | -55C to +175C | -55 °C to +175 °C |
| 封装 | TO-220AB (3-pin + tab) | TO-220AB (through-hole, 3 leads) |
| 安装类型 | Through Hole | Through Hole |
| Technology | HEXFET (Advanced Process) | HEXFET (advanced process) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Gate-to-Source Voltage (VGS) Max | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (typ 1.5 V) |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 22 mΩ max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25°C | — | 110 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.4 °C/W |
| Logic-Level Gate Drive | — | Yes (fully enhanced at VGS=5V) |