IRFZ48NSTRLPBF vs IRLR3636TRPBF 对比

详细并排对比 IRFZ48NSTRLPBF 出自 Infineon 和 IRLR3636TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFZ48NSTRLPBF IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF ✓ 量产中

规格对比

参数 IRFZ48NSTRLPBF IRLR3636TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $2.38
FET Type N-Channel Power MOSFET N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC —
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
工作结温 -55C to +175C —
封装 D2PAK (TO-263) Surface Mount TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
RoHS 状态 Compliant Compliant
Technology Family HEXFET advanced process technology —
Drain-to-Source Voltage (V_DSS) — 60 V
Continuous Drain Current (I_D) at T_C = 25C — 50 A
Continuous Drain Current (I_D) at T_C = 100C — [DATA_NEEDED: I_D at 100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Maximum R_DS(on) at V_GS = 10V — 6.8 mOhm
Typical R_DS(on) at V_GS = 10V — 5.4 mOhm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) range]
Total Gate Charge (Q_G) — 33 nC
Maximum Power Dissition (P_D) at T_C = 25C — 143 W
工作温度范围 — -55C to +175C
Technology — IR HEXFET / IR MOSFET
Lead-Free — Yes (PBF suffix)

数据手册与资源

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