IRL2910STRLPBF vs IRF1310NSTRLPBF 对比
详细并排对比 IRL2910STRLPBF 出自 Infineon 和 IRF1310NSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRL2910STRLPBF | IRF1310NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.98 | $0.84 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (Infineon/IR) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 55 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10V | 26 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | Logic-level (1V-2V) | — |
| Total Gate Charge (Qg) | 93.3 nC | 73.3 nC |
| Power Dissipation @ TA=25C | 3.8 W | — |
| Power Dissipation @ TC=25C | 200 W | — |
| 封装 | D2PAK (TO-263) Surface Mount | D2PAK (TO-263AB) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (TJ) | -55C to +175C |
| RoHS 状态 | Compliant | — |
| 无卤 | Compliant (per GlobalSpec) | — |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |