IRL2910STRLPBF vs IRF1310NSTRLPBF Comparison
Detailed side-by-side comparison of IRL2910STRLPBF by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRL2910STRLPBF - 100V 55A Logic-Level N-Channel MOSFET | Infineon
IRL2910STRLPBF β Active
Specification Comparison
| Parameter | IRL2910STRLPBF | IRF1310NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.84 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (Infineon/IR) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 55 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10V | 26 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | Logic-level (1V-2V) | β |
| Total Gate Charge (Qg) | 93.3 nC | 73.3 nC |
| Power Dissipation @ TA=25C | 3.8 W | β |
| Power Dissipation @ TC=25C | 200 W | β |
| Package | D2PAK (TO-263) Surface Mount | D2PAK (TO-263AB) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ) | -55C to +175C |
| RoHS Status | Compliant | β |
| Halogen Free | Compliant (per GlobalSpec) | β |
| Continuous Drain Current (ID) at TC=25C | β | 42 A |
| On-Resistance RDS(on) max at VGS=10V | β | 36 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | β | 160 W |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Built-in Diode | β | Yes (intrinsic body diode) |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Configuration | β | Single with built-in diode |