IRL540NPBF vs IPD090N03LGATMA1 对比
详细并排对比 IRL540NPBF 出自 Infineon 和 IPD090N03LGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRL540NPBF | IPD090N03LGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.86 | $0.34 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number | IRL540NPBF | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | HEXFET (Planar DMOS) | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Gate-to-Source Voltage (VGS) max | +/-16 V | — |
| Continuous Drain Current (ID) at Tc=25C | 36 A | — |
| Pulsed Drain Current (IDM) | 130 A (pulsed) | — |
| On-Resistance RDS(on) max | 44 mOhm at VGS=5V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2 V (logic level) | — |
| Total Gate Charge (Qg) | 49.3 nC | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | TO-220AB (through-hole) | PG-TO252-3-11 (DPAK) |
| 安装类型 | Through Hole | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | — | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | — | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | — | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| 工作温度范围 | — | -55C to +175C (junction) |
| MSL 等级 | — | 1 (unlimited) |
| Technology Family | — | OptiMOS 30V |
| Configuration | — | Single |