IRL540NPBF vs IPD090N03LGATMA1 Comparación
Comparación detallada lado a lado de IRL540NPBF por Infineon y IPD090N03LGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRL540NPBF | IPD090N03LGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $0,34 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number | IRL540NPBF | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (Planar DMOS) | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Gate-to-Source Voltage (VGS) max | +/-16 V | — |
| Continuous Drain Current (ID) at Tc=25C | 36 A | — |
| Pulsed Drain Current (IDM) | 130 A (pulsed) | — |
| On-Resistance RDS(on) max | 44 mOhm at VGS=5V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2 V (logic level) | — |
| Total Gate Charge (Qg) | 49.3 nC | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | TO-220AB (through-hole) | PG-TO252-3-11 (DPAK) |
| Tipo de montaje | Through Hole | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | — | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | — | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | — | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Rango de temperatura de funcionamiento | — | -55C to +175C (junction) |
| Nivel MSL | — | 1 (unlimited) |
| Technology Family | — | OptiMOS 30V |
| Configuration | — | Single |