IRL540NSTRLPBF vs IRFR120NTRLPBF 对比
详细并排对比 IRL540NSTRLPBF 出自 Infineon 和 IRFR120NTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRL540NSTRLPBF | IRFR120NTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.51 | $0.62 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 36 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΩ | — |
| On-Resistance (RDS(on)) max @ VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-Source Voltage (VGS) max | ±16 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | Logic-level | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | 49.3 nC | 16.7 nC |
| Power Dissipation (PD) at Tc=25°C | 140 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| 工作温度范围 | -55°C to +175°C | — |
| 封装 | TO-263 (D2PAK) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (single-pulse) | Yes (fully avalanche rated) |
| RoHS 状态 | Compliant (LPBF suffix indicates lead-free) | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Technology | — | IR MOSFET (HEXFET) |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| 工作结温范围 | — | -55C to +175C |
| Lead-Free Finish | — | Yes (Pb-free) |