IRL540NSTRLPBF vs IRLR3114ZTRPBF 对比

详细并排对比 IRL540NSTRLPBF 出自 Infineon 和 IRLR3114ZTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRL540NSTRLPBF IRLR3114ZTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.51 $0.46
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at Tc=25°C 36 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 130 A
On-Resistance (RDS(on)) max @ VGS=10V 44 mΩ —
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-Source Voltage (VGS) max ±16 V 16 V
Gate Threshold Voltage (VGS(th)) Logic-level 2.5 V (typ)
Total Gate Charge (Qg) 49.3 nC 40 nC @ VGS=4.5 V
Power Dissipation (PD) at Tc=25°C 140 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
工作温度范围 -55°C to +175°C —
封装 TO-263 (D2PAK) TO-252AA (DPAK) surface mount
安装类型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (single-pulse) —
RoHS 状态 Compliant (LPBF suffix indicates lead-free) Compliant
MSL 等级 [DATA_NEEDED: MSL rating] —
晶体管类型 — N-Channel MOSFET
Technology — HEXFET (IR MOSFET)
Continuous Drain Current (ID, Tc=25 C) — 42 A
Continuous Drain Current (ID, Tc=100 C) — 30 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mOhm
On-Resistance RDS(on) @ VGS=4.5V — 4.9 mOhm
Input Capacitance (Ciss) — 3.81 nF
Power Dissipation (Pd, Tc=25 C) — 140 W
工作结温 — -55 C to +175 C
引脚数 — 3 (2 + tab)

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