IRLB4132PBF vs IRFB4020PBF 对比
详细并排对比 IRLB4132PBF 出自 Infineon 和 IRFB4020PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLB4132PBF | IRFB4020PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $1.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| 晶体管类型 | N-Channel MOSFET (HEXFET) | — |
| Drain-Source Voltage (VDS) | 30 V | 200 V |
| Continuous Drain Current (ID, Tc=25C) | 78 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, Tc=25C) | 140 W | — |
| On-Resistance (RDS(on), VGS=10V) | 3.5 mOhm (typical) | — |
| On-Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th), typical) | 1.0 V to 2.5 V | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: total gate charge] | — |
| Maximum Junction Temperature | 175 C | — |
| 工作温度范围 | -55 C to +175 C | — |
| 封装 / 外壳 | TO-220AB (through-hole, 3 leads) | — |
| 安装类型 | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (Pb-free PBF suffix) | — |
| AEC-Q101 Automotive Qualification | Not qualified (industrial/commercial) | — |
| FET Type | — | N-Channel |
| Technology | — | IR MOSFET (HEXFET) |
| Continuous Drain Current (ID) at TC | — | 18 A |
| Power Dissipation (PD) at TC | — | 100 W |
| RDS(on) Maximum | — | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | — | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 1.43 C/W |
| 工作结温 | — | 175 C (max) |
| 封装 | — | TO-220AB (through-hole) |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | — | Yes |
| Market Qualification | — | Consumer |
| Recommended Use | — | Class-D audio amplifier and high-efficiency switching applications |