IRLB8748PBF vs IRLB8721 对比
详细并排对比 IRLB8748PBF 出自 Infineon 和 IRLB8721 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLB8748PBF | IRLB8721 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.68 | $0.00 |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 92 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 15 nC typical | — |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| 工作温度范围 | -55C to +175C (junction) | — |
| Package Type | TO-220AB through-hole | — |
| 安装类型 | Through Hole | Through-hole |
| Technology Family | StrongIRFET / HEXFET | — |
| Channel Type | N-Channel | N-channel |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) | — |
| RoHS 状态 | Compliant (Pb-free PBF suffix) | — |
| Qualification Standard | JEDEC (Industrial market per datasheet) | — |
| Drain-Source Voltage | — | 30 V maximum |
| Continuous Drain Current | — | 62 A at Tc |
| Drain-Source On-State Resistance | — | 8.7 mOhm maximum |
| Power Dissipation | — | 65 W at Tc |
| 栅源电压 | — | +/-20 V maximum |
| 总栅极电荷 | — | 7.6 nC |
| Technology | — | StrongIRFET |
| Gate Drive Optimization | — | 5 V logic-level optimized |
| 封装 | — | TO-220AB through-hole package |
| Device Classification | — | Power MOSFET |
| Qualification | — | JEDEC product qualification according to the supplied cross-reference data |
| Related Ordering Code | — | IRLB8721PBF |
| Manufacturer | — | Infineon Technologies |
| Manufacturer Product Page | — | Infineon IRLB8721 |
| Maximum Drain Current Condition | — | Tc |
| Power Dissipation Condition | — | Tc |