IRLB8748PBF vs IRLB8721 비교
다음의 상세 나란히 비교: IRLB8748PBF 제조: Infineon 및 IRLB8721 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLB8748PBF | IRLB8721 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.68 | $0.00 |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 92 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 15 nC typical | — |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| 동작 온도 범위 | -55C to +175C (junction) | — |
| Package Type | TO-220AB through-hole | — |
| 실장 유형 | Through Hole | Through-hole |
| Technology Family | StrongIRFET / HEXFET | — |
| Channel Type | N-Channel | N-channel |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) | — |
| RoHS 상태 | Compliant (Pb-free PBF suffix) | — |
| Qualification Standard | JEDEC (Industrial market per datasheet) | — |
| Drain-Source Voltage | — | 30 V maximum |
| Continuous Drain Current | — | 62 A at Tc |
| Drain-Source On-State Resistance | — | 8.7 mOhm maximum |
| Power Dissipation | — | 65 W at Tc |
| 게이트-소스 전압 | — | +/-20 V maximum |
| 총 게이트 전하 | — | 7.6 nC |
| Technology | — | StrongIRFET |
| Gate Drive Optimization | — | 5 V logic-level optimized |
| 패키지 | — | TO-220AB through-hole package |
| Device Classification | — | Power MOSFET |
| Qualification | — | JEDEC product qualification according to the supplied cross-reference data |
| Related Ordering Code | — | IRLB8721PBF |
| Manufacturer | — | Infineon Technologies |
| Manufacturer Product Page | — | Infineon IRLB8721 |
| Maximum Drain Current Condition | — | Tc |
| Power Dissipation Condition | — | Tc |