IRLML2030TRPBF vs IRLML0030TRPBF 对比

详细并排对比 IRLML2030TRPBF 出自 Infineon 和 IRLML0030TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLML2030TRPBF IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon

IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon

IRLML2030TRPBF ✓ 量产中
Infineon
IRLML0030TRPBF IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF ✓ 量产中

规格对比

参数 IRLML2030TRPBF IRLML0030TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.14 $0.13
Manufacturer Infineon Technologies —
Part Number IRLML2030TRPBF —
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET) IR HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta 2.7 A —
Power Dissipation (PD) at Ta 1.3 W —
On-Resistance RDS(on) max @ VGS=10V 100 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V 154 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Charge (Qg) typ 1.0 nC —
封装 Micro3 (SOT-23) Micro3 / SOT-23 (3-pin)
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C (junction) —
MSL 等级 MSL 1 1 (unlimited floor life per JEDEC J-STD-020)
RoHS Compliance Yes (lead-free, halogen-free) —
Qualification JEDEC standard JEDEC standard
Soldering Wave-solder compatible Wave-solder capable
Continuous Drain Current (ID) at TA=25C — 5.3 A
Drain-Source On-Resistance (RDS(on)) max — 27 mOhm at VGS=4.5V
Gate-Source Threshold Voltage (VGS(th)) — Logic-level (5 V optimized)
Total Gate Charge (Qg) — 3.6 nC typical
Power Dissipation (PD) at TA=25C — 1.3 W
工作温度范围 — -55C to +150C
RoHS 状态 — Compliant

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