IRLR024NTRPBF vs IRLL024NTRPBF 对比
详细并排对比 IRLR024NTRPBF 出自 Infineon 和 IRLL024NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR024NTRPBF | IRLL024NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.46 | $0.22 |
| FET Type | N-Channel MOSFET, Metal Oxide | MOSFET, Metal Oxide |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | 10.4 nC |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| 工作温度范围 | -55 C to +175 C | — |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 | TO-252AA (DPAK) | SOT-223 (4-pin) |
| Technology | HEXFET (Advanced Process Technology) | HEXFET Power MOSFET |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 55 V |
| Continuous Drain Current (ID) at Ta | — | 3.1 A |
| Pulsed Drain Current (IDM) | — | 4.4 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.065 ohm |
| Gate Threshold Voltage (VGS(th)) | — | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | — | 1.0 W |
| Maximum Operating Junction Temperature | — | 175 C |
| RoHS 状态 | — | Compliant |