IRLR024NTRPBF vs IRLL024NTRPBF Comparison
Detailed side-by-side comparison of IRLR024NTRPBF by Infineon and IRLL024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR024NTRPBF | IRLL024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.22 |
| FET Type | N-Channel MOSFET, Metal Oxide | MOSFET, Metal Oxide |
| Drain-to-Source Voltage (Vdss) | 55 V | β |
| Continuous Drain Current (Id) at Tc=25C | 17 A | β |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | β |
| Rds(on) Max @ Vgs=10V | 65 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | β |
| Total Gate Charge (Qg) | 10 nC (typical) | 10.4 nC |
| Power Dissipation (Pd) at Tc=25C | 45 W | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | TO-252AA (DPAK) | SOT-223 (4-pin) |
| Technology | HEXFET (Advanced Process Technology) | HEXFET Power MOSFET |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| Gate Drive Level | Logic-Level | β |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Polarity | β | N-Channel |
| Operating Mode | β | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | β | 55 V |
| Continuous Drain Current (ID) at Ta | β | 3.1 A |
| Pulsed Drain Current (IDM) | β | 4.4 A |
| Static Drain-Source On-Resistance (RDS(on)) | β | 0.065 ohm |
| Gate Threshold Voltage (VGS(th)) | β | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | β | 1.0 W |
| Maximum Operating Junction Temperature | β | 175 C |
| RoHS Status | β | Compliant |