IRLR120NTRPBF vs IRFR220NPBF 对比
详细并排对比 IRLR120NTRPBF 出自 Infineon 和 IRFR220NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR120NTRPBF | IRFR220NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.27 | $0.74 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (Fifth Generation, planar) | HEXFET (Planar) |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 10 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Idm] | — |
| Rds(on) Max at Vgs=10V | 185 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Total Gate Charge (Qg) | 13.3 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Pd) at Tc=25C | 48 W | — |
| 工作温度范围 | -55C to +175C (junction) | -55C to +150C (junction) |
| 封装 | TO-252AA (DPAK), 3-pin surface mount | — |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Fully avalanche rated | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | Yes, lead-free (PBF suffix) |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25C | — | 5 A |
| Power Dissipation (PD) at TC=25C | — | 43 W |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| 封装 / 外壳 | — | TO-252AA (DPAK) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Avalanche Energy Rated | — | Yes (per datasheet characterization) |
| 引脚数量 | — | 3 (Gate, Drain, Source) plus tab |