IRLR3410TRPBF vs IRLR2705TRPBF 对比
详细并排对比 IRLR3410TRPBF 出自 Infineon 和 IRLR2705TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR3410TRPBF | IRLR2705TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.81 | $0.36 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET, 5th generation) | HEXFET (IR MOSFET generation 5) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Power Dissipation (Pd) at Tc=25C | 79 W | — |
| On-Resistance RDS(on) max | 105 mOhm | — |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | — |
| Total Gate Charge (Qg) | 22.7 nC | 16.7 nC |
| 封装 | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (junction) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (Pb-free, RoHS compliant) |
| MSL 等级 | 1 (unlimited floor life at <30C/85% RH) | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |
| Drain Tab Connection | Tab electrically tied to Drain | — |
| Polarity | N-Channel enhancement mode | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 28 A |
| Continuous Drain Current (ID) at TA=25C | — | [DATA_NEEDED: ID at TA=25C with 1in2 copper] |
| RDS(on) Max at VGS=10V | — | 40 mOhm |
| RDS(on) Max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate-to-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute max, +/-V] |
| Gate Threshold Voltage (VGS(th)) | — | Logic-Level (compatible with 4V drive) |
| Power Dissipation (PD) at Tc=25C | — | 68 W |
| Power Dissipation (PD) at TA=25C | — | [DATA_NEEDED: PD at TA=25C with 1in2 copper] |
| 工作结温 | — | -55C to +175C |
| Avalanche Rated | — | Yes |