IRLS3036TRLPBF vs IRF4905LPBF 对比

详细并排对比 IRLS3036TRLPBF 出自 Infineon 和 IRF4905LPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLS3036TRLPBF IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF ✓ 量产中

规格对比

参数 IRLS3036TRLPBF IRF4905LPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.39 $0.98
Polarity N-Channel P-Channel
Technology IR HEXFET (planar DMOS) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25C 270 A —
Continuous Drain Current (Id) at Tc=100C 195 A —
Pulsed Drain Current (Idm) 1100 A [DATA_NEEDED: pulsed drain current]
Rds(on) max @ Vgs=10V 1.9 mOhm —
Gate-Source Threshold Voltage (Vgs(th)) Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] —
Total Gate Charge (Qg) typ 91 nC —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max +/- V] ±20 V
Power Dissipation (Pd) at Tc=25C 380 W —
工作温度范围 -55C to +175C —
封装 D2PAK (TO-263), surface mount TO-262 (I2PAK), through-hole, 3-pin
安装类型 Surface Mount Through Hole
MSL 等级 1 —
RoHS 状态 Compliant (PBF suffix) —
Lead-Free Yes (PBF suffix) —
Integrated Body Diode Yes (avalanche rated) —
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) @ Tc=25C — -74 A
On-Resistance Rds(on) max @ Vgs=-10V — 20 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical]
Total Power Dissipation (Ptot) @ Tc=25C — 200 W
工作结温 — -55C to +150C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value]
Rise Time (tr) typ — [DATA_NEEDED: rise time]
Fall Time (tf) typ — [DATA_NEEDED: fall time]
Lead-Free / RoHS — Yes (PbF suffix)
Avalanche Rated — Yes

数据手册与资源

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