IRLZ34NSTRLPBF vs IRFR5305TRLPBF 对比
详细并排对比 IRLZ34NSTRLPBF 出自 Infineon 和 IRFR5305TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLZ34NSTRLPBF | IRFR5305TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.58 | $0.38 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | [DATA_NEEDED: VGS(th) range] |
| Total Gate Charge (Qg) | 16.7 nC | — |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| 封装 | D2PAK (TO-263), surface mount | TO-252AA (DPAK), surface mount |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| 安装类型 | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | — |
| RoHS 状态 | Compliant (Pb-free) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -31 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 65 mΩ |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| 工作结温 | — | -55C to +175C |
| Technology | — | HEXFET fifth-generation planar MOSFET |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS | — | Yes (Pb-free, suffix "PBF") |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |