IRS2101STRPBF vs IRS2011STRPBF 对比

详细并排对比 IRS2101STRPBF 出自 Infineon 和 IRS2011STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 量产中

规格对比

参数 IRS2101STRPBF IRS2011STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $1.55
Driver Type High-Side, Low-Side (Half-Bridge) —
Number of Drivers 2 —
输出数量 2-OUT 2
输出配置 Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility 3.3 V / 5 V / 15 V 3.3 V CMOS / LSTTL
VS Transient Range -5 V to +600 V (logic operational) —
Undervoltage Lockout Yes (VCC and VBS) —
Propagation Delay Matching Matched both channels —
dV/dt Immunity Yes (latch-immune CMOS) —
工作温度 -40C to +125C -40 C to +125 C
封装 8-SOIC (SOIC-8) 8-SOIC (DSO-8)
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TRPBF) —
Technology HVIC + latch-immune CMOS —
RoHS 状态 Compliant (PBF suffix) Compliant (PBF suffix)
功能 — Half-Bridge Gate Driver
Configuration — High-Side and Low-Side, Independent Channels
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Supply Voltage (VCC) — 10 V to 20 V
Negative Transient Tolerance — Yes, dV/dt immune
Suitable Drivers — MOSFETs and IGBTs

数据手册与资源

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