IRS2302STRPBF vs IRS2011STRPBF 对比

详细并排对比 IRS2302STRPBF 出自 Infineon 和 IRS2011STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 量产中

规格对比

参数 IRS2302STRPBF IRS2011STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $1.55
Driver Configuration Half-Bridge (High and Low Side, Independent) —
Number of Drivers 2 —
Supply Voltage (VCC) 5 V to 20 V 10 V to 20 V
Offset Voltage (High-Side) Up to +600 V —
Source Current (typ.) 0.2 A —
Sink Current (typ.) 0.35 A —
上升时间 130 ns (typ.) —
下降时间 50 ns (typ.) —
Propagation Delay 220 ns (typ.) —
Turn-On Delay [DATA_NEEDED: exact turn-on delay] —
Turn-Off Delay [DATA_NEEDED: exact turn-off delay] —
Logic Input Compatibility 3.3 V, 5 V, 15 V 3.3 V CMOS / LSTTL
Input Type Non-Inverting —
Shutdown Pin Yes —
UVLO Yes (VCC and VBS) —
Cross-Conduction Protection Yes (built-in dead time) —
工作温度 -40C to +125C -40 C to +125 C
封装 8-SOIC (3.90 mm body) 8-SOIC (DSO-8)
安装类型 Surface Mount Surface Mount
MSL 等级 2 (per JEDEC J-STD-020) —
无卤 Yes —
RoHS 状态 Compliant Compliant (PBF suffix)
功能 — Half-Bridge Gate Driver
Configuration — High-Side and Low-Side, Independent Channels
输出数量 — 2
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Negative Transient Tolerance — Yes, dV/dt immune
Suitable Drivers — MOSFETs and IGBTs

数据手册与资源

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